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LS4148 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce LS4148
Description  Small Signal SMD Switching Diodes
Download  2 Pages
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

LS4148 Fiches technique(HTML) 1 Page - Diotec Semiconductor

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LS4148, LS4448
LS4148, LS4448
Small Signal SMD Switching Diodes
Ultraschnelle SMD-Kleinsignaldioden
IFAV = 150...300 mA
VF
< 1.0 V
Tjmax = 200°C
VRRM = 50...100 V
IFSM = 2000...4000 mA
trr
< 4 ns
Version 2015-10-27
~ SOD-80C
Glass Quadro-MiniMELF
Dimensions - Maße [mm]
Typical Applications
Signal processing,
High-speed switching
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schnelles Schalten
Standardausführung 1)
Features
Quadro glass body
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Quadro-Gehäusekörper
Extrem schnelles Schalten
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped and reeled
2500 / 7“
Gegurtet auf Rolle
Weight approx.
0.04 g
Gewicht ca.
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
LS4148, LS4448
Power dissipation − Verlustleistung
Ptot
500 mW 2)
Max. average forward current – Dauergrenzstrom (dc)
IFAV
150 mA 3)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 3)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
IFSM
IFSM
500 mA 3)
2 A
Reverse voltage – Sperrspannung
VR
75 V
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
VRRM
100 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+175°C
-55…+175°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage
Durchlass-Spannung
LS4148
IF = 50 mA
VF
< 1.0 V
LS4448
IF = 5 mA
IF = 100 mA
VF
VF
0.62...0.72 V
< 1 V
Leakage current – Sperrstrom 3)
VR = 20 V
VR = 75 V
IR
IR
< 25 nA
< 5 µA
Leakage current – Sperrstrom, Tj = 125°C 4)
VR = 20 V
VR = 75 V
IR
IR
< 30 µA
< 50 µA
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS


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