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BUZ255 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ255 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor BUZ255 DESCRIPTION ·High speed switching ·Low R DS(ON) ·Easy driver for cost effective application APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 13 A Ptot Total Dissipation@TC=25℃ 95 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.32 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Numéro de pièce similaire - BUZ255 |
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Description similaire - BUZ255 |
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