Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

September 2004

ECG015

¼ Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

Typical Device RF Performance

1. Test conditions: T = 25º C, Supply Voltage = +8 V, Device Voltage = 5.0 V, Rbias = 30

Ω, Icc = 100 mA typical, 50 Ω System.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.

Ssg&P1dBvs.

Temperature @1.96GHz

12

14

16

18

20

22

24

-40°C

25°C

85°C

Ssg

OIP3

P1dB

ACPR1 vs. Pout

at 1.9GHz (IS95 9 Ch. Fwd)

0

10

20

30

40

50

60

70

11

13

15

17

Average power out(dBm)

85°C

-40°C

25°C

P1dBvs. Frequency

22

22.5

23

23.5

24

24.5

1.96GHz

2.14GHz

2.45GHz

ACPR1vs. Pout at 2.14GHz

(IS95 9 ChFwd)

0

10

20

30

40

50

60

70

11

13

15

17

Average power out(dBm)

25°C

-40°C

85°C

Icc vs. Vde

0

20

40

60

80

100

120

140

4.5

4.7

4.9

5.1

5.3

Vde

25°C

Ssg, OIP3 andP1dBvs.

Temperature at 2.45GHz

38

40

42

44

-40°C

25°C

85°C

12

16

20

24

OIP3

Ssg

P1dB