SI6954DQ datasheet(2/4 Pages) VISHAY

No de pièce	SI6954DQ

Description	Dual N-Channel 30-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si6954DQ

Vishay Siliconix

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2-2

Document Number: 70179

S-49534—Rev. C, 06-Oct-97

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 55_C

25

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

15

A

Drain Source On State Resistancea

rDS( )

VGS = 10 V, ID = 3.9 A

0.043

0.065

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 3.1 A

0.075

0.095

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 3.9 A

7.0

S

Diode Forward Voltagea

VSD

IS = 1.25 A, VGS = 0 V

0.77

1.2

V

Dynamicb

Total Gate Charge

Qg

V10 V V

10 V I

3 9 A

9.8

15

C

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 10 V, ID = 3.9 A

2.1

nC

Gate-Drain Charge

Qgd

1.6

Turn-On Delay Time

td(on)

V10 V R

10

W

9

15

Rise Time

tr

VDD = 10 V, RL = 10 W

I

1 A V

10 V R

6

W

6

12

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ 1 A, VGEN = 10 V, RG = 6 W

18

27

ns

Fall Time

tf

6

12

Source-Drain Reverse Recovery Time

trr

IF = 1.25 A, di/dt = 100 A/ms

48

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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