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Moteur de recherche de fiches techniques de composants électroniques |
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IRF8010 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF8010 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF8010 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C R DS(on) Static Drain-to-Source On-Resistance ––– 12 15 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V I DSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 I GSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 82 ––– ––– V Q g Total Gate Charge ––– 81 120 Qgs Gate-to-Source Charge ––– 22 ––– nC Q gd Gate-to-Drain ("Miller") Charge ––– 26 ––– td(on) Turn-On Delay Time ––– 15 ––– t r Rise Time ––– 130 ––– td(off) Turn-Off Delay Time ––– 61 ––– ns t f Fall Time ––– 120 ––– Ciss Input Capacitance ––– 3830 ––– C oss Output Capacitance ––– 480 ––– Crss Reverse Transfer Capacitance ––– 59 ––– pF C oss Output Capacitance ––– 3830 ––– Coss Output Capacitance ––– 280 ––– C oss eff. Effective Output Capacitance ––– 530 ––– Avalanche Characteristics Parameter Units E AS Single Pulse Avalanche Energy mJ IAR Avalanche Current A E AR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 80 (Body Diode) A ISM Pulsed Source Current ––– ––– 320 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 99 150 ns Qrr Reverse RecoveryCharge ––– 460 700 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typ. ––– ––– ––– Conditions VDS = 25V, ID = 45A I D = 80A VDS = 80V Conditions 26 V GS = 10V VGS = 0V V DS = 25V ƒ = 1.0MHz 310 45 MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 80A, VGS = 0V TJ = 150°C, IF = 80A, VDD = 50V di/dt = 100A/µs Conditions V GS = 0V, ID = 250µA Reference to 25°C, ID = 1mA V GS = 10V, ID = 45A VDS = VGS, ID = 250µA V DS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C V GS = 20V VGS = -20V Max. V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz V GS = 0V, VDS = 0V to 80V V GS = 10V VDD = 50V I D = 80A RG = 39Ω |
Numéro de pièce similaire - IRF8010 |
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Description similaire - IRF8010 |
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