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BD137 Fiches technique(PDF) 1 Page - Nanjing International Group Co

No de pièce BD137
Description  High Current
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Fabricant  DGNJDZ [Nanjing International Group Co]
Site Internet  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

BD137 Fiches technique(HTML) 1 Page - Nanjing International Group Co

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BD135/BD137/BD139
TRANSISTOR (NPN)
FEATURES
·High Current(1.5A)
·Low Voltage(80V)
MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (T
(T
(T
(TA
A
A
A=25
=25
=25
=25℃ unless
unless
unless
unless otherwise
otherwise
otherwise
otherwise noted
noted
noted
noted ))))
Symbol
Symbol
Symbol
Symbol
Parameter
Parameter
Parameter
Parameter
Value
Value
Value
Value
Units
Units
Units
Units
BD135
BD135
BD135
BD135
BD137
BD137
BD137
BD137
BD139
BD139
BD139
BD139
V
V
V
VCBO
CBO
CBO
CBO
Collector-Base Voltage
45
60
80
V
V
V
V
VCEO
CEO
CEO
CEO
Collector-Emitter Voltage
45
60
80
V
V
V
V
VEBO
EBO
EBO
EBO
Emitter-Base Voltage
5
V
IIIIC
C
C
C
Collector Current -Continuous
1.5
A
P
P
P
PC
C
C
C
Collector power dissipation
1.25
W
T
T
T
TJJJJ
Junction Temperature
150
T
T
T
Tstg
stg
stg
stg
Storage Temperature
-55-150
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL
CHARACTERISTICS(Tamb=25
CHARACTERISTICS(Tamb=25
CHARACTERISTICS(Tamb=25
CHARACTERISTICS(Tamb=25 ℃unless
unless
unless
unless otherwise
otherwise
otherwise
otherwise
specified)
specified)
specified)
specified)
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Test
Test
Test
Test conditions
conditions
conditions
conditions
MIN
MIN
MIN
MIN
TYP
TYP
TYP
TYP
MAX
MAX
MAX
MAX
UNIT
UNIT
UNIT
UNIT
BD135
45
V
Collector-base
Collector-base
Collector-base
Collector-base breakdown
breakdown
breakdown
breakdown voltage
voltage
voltage
voltage
V(BR)CBO
Ic=
100µA,IE=0
BD137
60
BD139
80
BD135
45
V
Collector-emitter
Collector-emitter
Collector-emitter
Collector-emitter breakdown
breakdown
breakdown
breakdown voltage
voltage
voltage
voltage
V(BR)CEO*
Ic=
30mA,IB=0
BD137
60
BD139
80
Emitter-base
Emitter-base
Emitter-base
Emitter-base breakdown
breakdown
breakdown
breakdown voltage
voltage
voltage
voltage
V(BR)EBO
IE=
100µA,IC=0
5
V
Collector
Collector
Collector
Collector cut-off
cut-off
cut-off
cut-off current
current
current
current
ICBO
VCB=
30V,IE=0
0.1
µA
Emitter
Emitter
Emitter
Emitter cut-off
cut-off
cut-off
cut-off current
current
current
current
IEBO
VEB=
5V,IC=0
10
µA
hFE(1)
VCE=
2V,IC=5mA
25
DC
DC
DC
DC current
current
current
current gain
gain
gain
gain
hFE(2)
VCE=
2V,IC=150mA
40
250
hFE(3)
VCE=
2V,IC=500mA
25
Collector-emitter
Collector-emitter
Collector-emitter
Collector-emitter saturation
saturation
saturation
saturation voltage
voltage
voltage
voltage
VCE(sat)
IC=
500mA,IB=50mA
0.5
V
Base-emitter
Base-emitter
Base-emitter
Base-emitter voltage
voltage
voltage
voltage
VBE
VCE=
2V,IC=500mA
1
V
*PULSE
*PULSE
*PULSE
*PULSE TEST
TEST
TEST
TEST
CLASSIFICATION
CLASSIFICATION
CLASSIFICATION
CLASSIFICATION OF
OF
OF
OF
hFE(2)
hFE(2)
hFE(2)
hFE(2)
Rank
Rank
Rank
Rank
Range
Range
Range
Range
40-100
100-200
200-300
TO-126
TO-126
TO-126
TO-126
1.
EMITTER
2.
COLLECTOR
3.
BASE
123
TO-126
TO-126
TO-126
TO-126 Plastic-Encapsulate
Plastic-Encapsulate
Plastic-Encapsulate
Plastic-Encapsulate Transistors
Transistors
Transistors
Transistors
DONGGUAN NANJING ELECTRONICS LTD.,


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