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BD137 Fiches technique(PDF) 1 Page - Nanjing International Group Co |
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BD137 Fiches technique(HTML) 1 Page - Nanjing International Group Co |
1 / 2 page BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES ·High Current(1.5A) ·Low Voltage(80V) MAXIMUM MAXIMUM MAXIMUM MAXIMUM RATINGS RATINGS RATINGS RATINGS (T (T (T (TA A A A=25 =25 =25 =25℃ unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted )))) Symbol Symbol Symbol Symbol Parameter Parameter Parameter Parameter Value Value Value Value Units Units Units Units BD135 BD135 BD135 BD135 BD137 BD137 BD137 BD137 BD139 BD139 BD139 BD139 V V V VCBO CBO CBO CBO Collector-Base Voltage 45 60 80 V V V V VCEO CEO CEO CEO Collector-Emitter Voltage 45 60 80 V V V V VEBO EBO EBO EBO Emitter-Base Voltage 5 V IIIIC C C C Collector Current -Continuous 1.5 A P P P PC C C C Collector power dissipation 1.25 W T T T TJJJJ Junction Temperature 150 ℃ T T T Tstg stg stg stg Storage Temperature -55-150 ℃ ELECTRICAL ELECTRICAL ELECTRICAL ELECTRICAL CHARACTERISTICS(Tamb=25 CHARACTERISTICS(Tamb=25 CHARACTERISTICS(Tamb=25 CHARACTERISTICS(Tamb=25 ℃unless unless unless unless otherwise otherwise otherwise otherwise specified) specified) specified) specified) Parameter Parameter Parameter Parameter Symbol Symbol Symbol Symbol Test Test Test Test conditions conditions conditions conditions MIN MIN MIN MIN TYP TYP TYP TYP MAX MAX MAX MAX UNIT UNIT UNIT UNIT BD135 45 V Collector-base Collector-base Collector-base Collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage V(BR)CBO Ic= 100µA,IE=0 BD137 60 BD139 80 BD135 45 V Collector-emitter Collector-emitter Collector-emitter Collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage V(BR)CEO* Ic= 30mA,IB=0 BD137 60 BD139 80 Emitter-base Emitter-base Emitter-base Emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage V(BR)EBO IE= 100µA,IC=0 5 V Collector Collector Collector Collector cut-off cut-off cut-off cut-off current current current current ICBO VCB= 30V,IE=0 0.1 µA Emitter Emitter Emitter Emitter cut-off cut-off cut-off cut-off current current current current IEBO VEB= 5V,IC=0 10 µA hFE(1) VCE= 2V,IC=5mA 25 DC DC DC DC current current current current gain gain gain gain hFE(2) VCE= 2V,IC=150mA 40 250 hFE(3) VCE= 2V,IC=500mA 25 Collector-emitter Collector-emitter Collector-emitter Collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage VCE(sat) IC= 500mA,IB=50mA 0.5 V Base-emitter Base-emitter Base-emitter Base-emitter voltage voltage voltage voltage VBE VCE= 2V,IC=500mA 1 V *PULSE *PULSE *PULSE *PULSE TEST TEST TEST TEST CLASSIFICATION CLASSIFICATION CLASSIFICATION CLASSIFICATION OF OF OF OF hFE(2) hFE(2) hFE(2) hFE(2) Rank Rank Rank Rank Range Range Range Range 40-100 100-200 200-300 TO-126 TO-126 TO-126 TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 TO-126 TO-126 TO-126 TO-126 Plastic-Encapsulate Plastic-Encapsulate Plastic-Encapsulate Plastic-Encapsulate Transistors Transistors Transistors Transistors DONGGUAN NANJING ELECTRONICS LTD., |
Numéro de pièce similaire - BD137 |
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Description similaire - BD137 |
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