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BC559C Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce BC559C
Description  Si-Epitaxial PlanarTransistors
Download  2 Pages
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC559C Fiches technique(HTML) 1 Page - Diotec Semiconductor

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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
8
01.11.2003
BC 556 ... BC 559
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
500 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BC 556
BC 557
BC 558/559
Collector-Emitter-voltage
B open
- V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
500 mW 1)
Collector current – Kollektorstrom (DC)
- I
C
100 mA
Junction temp. – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 55…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE = 5 V, - IC = 2 mA
h
FE
110...220
200...460
420...800
h-Parameters at - V
CE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
h
fe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangsimpedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance – Ausg.-Leitwert
h
oe
18 < 30
:S
30 < 60
:S
60 < 110
:S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
Collector saturation voltage – Kollektor-Sättigungsspg.
- I
C = 100 mA, - IB = 5 mA
-V
CEsat
300 mV


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