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BC808-40 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce BC808-40
Description  Surface mount Si-Epitaxial PlanarTransistors
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC808-40 Fiches technique(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
1.1
2.9 ±0.1
0.4
1
2
3
Type
Code
1.9
BC 807 / BC 808
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
310 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BC 807
BC 808
Collector-Emitter-voltage
B open
- V
CE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- V
CES
50 V
30 V
Collector-Base-voltage
E open
- V
CB0
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
310 mW 1)
Collector current – Kollektorstrom (DC)
- I
C
800 mA
Peak Coll. current – Kollektor-Spitzenstrom
- I
CM
1000 mA
Peak Base current – Basis-Spitzenstrom
- I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
I
EM
1000 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics, T
j = 25
/C
Kennwerte, T
j = 25
/C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE = 1 V, - IC = 100 mA
BC807
BC808
h
FE
100
600
- V
CE = 1 V, - IC = 500 mA
h
FE
40
- V
CE = 1 V, - IC = 100 mA
Group -16
h
FE
100
160
250
Group -25
h
FE
160
250
400
Group -40
h
FE
250
400
600


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