Moteur de recherche de fiches techniques de composants électroniques |
|
ST18N10D Fiches technique(PDF) 1 Page - Stanson Technology |
|
ST18N10D Fiches technique(HTML) 1 Page - Stanson Technology |
1 / 6 page ST18N10D N Channel Enhancement Mode MOSFET 18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST18N10D 2009. V1 DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 PART MARKING W: Wafer Code P: Product Code Y: Year Code A: Produce Code FEATURE ! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V ! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.0V Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! TO-252 Package design |
Numéro de pièce similaire - ST18N10D |
|
Description similaire - ST18N10D |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |