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SN74CB3Q3257RGYR Fiches technique(PDF) 1 Page - Texas Instruments

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No de pièce SN74CB3Q3257RGYR
Description  FET Multiplexer/Demultiplexer
Download  25 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

SN74CB3Q3257RGYR Fiches technique(HTML) 1 Page - Texas Instruments

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SN74CB3Q3257
SCDS135B – SEPTEMBER 2003 – REVISED JUNE 2015
SN74CB3Q3257 4-Bit 1-of-2 FET Multiplexer/Demultiplexer
2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch
1 Features
2 Applications
1
High-Bandwidth Data Path
IP Phones: Wired and Wireless
(up to 500 MHz)
Optical Modules
5-V Tolerant I/Os With Device Powered Up or
Optical Networking: Video Over Fiber and EPON
Powered Down
Private Branch Exchange (PBX)
Low and Flat ON-State Resistance (ron)
WiMAX and Wireless Infrastructure Equipment
Characteristics Over Operating Range
(ron= 4 Ω Typical)
3 Description
Rail-to-Rail Switching on Data I/O Ports
The SN74CB3Q3257 device is a high-bandwidth FET
bus switch utilizing a charge pump to elevate the gate
0- to 5-V Switching With 3.3-V VCC
voltage of the pass transistor, providing a low and flat
0- to 3.3-V Switching With 2.5-V VCC
ON-state resistance (ron).
Bidirectional Data Flow With Near-Zero
Propagation Delay
Device Information(1)
Low Input and Output Capacitance Minimizes
PART NUMBER
PACKAGE
BODY SIZE (NOM)
Loading and Signal Distortion
SN74CB3Q3257D
SOIC (16)
9.90 mm × 3.91 mm
(Cio(OFF) = 3.5 pF Typical)
SN74CB3Q3257DB
SSOP (6)
6.20 mm × 5.30 mm
Fast Switching Frequency (f OE = 20 MHz
SN74CB3Q3257DGV
TVSOP (16)
3.60 mm × 4.40 mm
Maximum)
SN74CB3Q3257DBQ
SSOP (16)
4.90 mm × 3.90 mm
Data and Control Inputs Provide Undershoot
SN74CB3Q3257PW
TSSOP (16)
5.00 mm × 4.40 mm
Clamp Diodes
SN74CB3Q3257RGY
VQFN (16)
4.00 mm × 3.50 mm
Low Power Consumption
(1) For all available packages, see the orderable addendum at
(ICC = 0.7 mA Typical)
the end of the data sheet.
VCC Operating Range From 2.3 V to 3.6 V
Logic Diagram (Positive Logic)
Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
Ioff Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
2000-V Human Body Model
(A114-B, Class II)
1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications:
USB Interface, Differential Signal Interface,
Bus Isolation, Low-Distortion Signal Gating (1)
(1)
For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI application
report, CBT-C, CB3T, and CB3Q Signal-Switch Families,
SCDA008.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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