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CSD17313Q2 Fiches technique(PDF) 1 Page - Texas Instruments

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No de pièce CSD17313Q2
Description  N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17313Q2 Fiches technique(HTML) 1 Page - Texas Instruments

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VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
D007
TC = 25°C, I D = 4 A
TC = 125°C, I D = 4 A
Qg - Gate Charge (nC)
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
7
8
D004
ID = 4 A
VDS = 15 V
1
D
2
D
D
3
D
4
D
5
G
6
S
S
P0108-01
Product
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Sample &
Buy
Technical
Documents
Tools &
Software
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CSD17313Q2
SLPS260E – MARCH 2010 – REVISED SEPTEMBER 2015
CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
Optimized for 5-V Gate Drive
TA = 25°C
TYPICAL VALUE
UNIT
Ultra-Low Qg and Qgd
VDS
Drain-to-Source Voltage
30
V
Low Thermal Resistance
Qg
Gate Charge Total (4.5 V)
2.1
nC
Qgd
Gate Charge Gate-to-Drain
0.4
nC
Pb-Free
VGS = 3 V
31
m
RoHS Compliant
Drain-to-Source On
RDS(on)
VGS = 4.5 V
26
m
Resistance
Halogen-Free
VGS = 8 V
24
m
SON 2-mm × 2-mm Plastic Package
VGS(th)
Threshold Voltage
1.3
V
2 Applications
Ordering Information(1)
DC-DC Converters
PART NUMBER
QTY
MEDIA
PACKAGE
SHIP
Battery and Load Management Applications
CSD17313Q2
3000 13-Inch Reel
SON 2-mm × 2-mm
Tape and
Plastic Package
Reel
CSD17313Q2T
250
7-Inch Reel
3 Description
(1) For all available packages, see the orderable addendum at
This 30-V, 24-m
Ω, 2-mm x 2-mm SON NexFET™
the end of the data sheet.
power MOSFET is designed to minimize losses in
power conversion applications and optimized for 5-V
Absolute Maximum Ratings
gate drive applications. The 2-mm × 2-mm SON
TA = 25°C
VALUE
UNIT
offers excellent thermal performance for the size of
VDS
Drain-to-Source Voltage
30
V
the package.
VGS
Gate-to-Source Voltage
+10 / –8
V
Continuous Drain Current (package
Top View
5
limited)
ID
Continuous Drain Current (silicon
A
19
limited), TC = 25°C
Continuous Drain Current(1)
7.3
IDM
Pulsed Drain Current, TA = 25°C
(2)
57
A
Power Dissipation(1)
2.4
PD
W
Power Dissipation, TC = 25°C
17
TJ,
Operating Junction and
–55 to 150
°C
TSTG
Storage Temperature Range
Avalanche Energy, Single Pulse,
EAS
18
mJ
ID = 19A, L = 0.1mH, RG = 25Ω
(1) Typical RθJA = 53°C/W on a 1-inch
2, 2-oz. Cu pad on a
Added text for spacing
0.06-inch thick FR4 PCB.
(2) Max RθJC = 7.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
^^
On State Resistance vs Gate to Source Voltage
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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