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CSD17313Q2 Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD17313Q2 Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 13 page VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 D007 TC = 25°C, I D = 4 A TC = 125°C, I D = 4 A Qg - Gate Charge (nC) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 D004 ID = 4 A VDS = 15 V 1 D 2 D D 3 D 4 D 5 G 6 S S P0108-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17313Q2 SLPS260E – MARCH 2010 – REVISED SEPTEMBER 2015 CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Optimized for 5-V Gate Drive TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 2.1 nC Qgd Gate Charge Gate-to-Drain 0.4 nC • Pb-Free VGS = 3 V 31 m Ω • RoHS Compliant Drain-to-Source On RDS(on) VGS = 4.5 V 26 m Ω Resistance • Halogen-Free VGS = 8 V 24 m Ω • SON 2-mm × 2-mm Plastic Package VGS(th) Threshold Voltage 1.3 V 2 Applications Ordering Information(1) • DC-DC Converters PART NUMBER QTY MEDIA PACKAGE SHIP • Battery and Load Management Applications CSD17313Q2 3000 13-Inch Reel SON 2-mm × 2-mm Tape and Plastic Package Reel CSD17313Q2T 250 7-Inch Reel 3 Description (1) For all available packages, see the orderable addendum at This 30-V, 24-m Ω, 2-mm x 2-mm SON NexFET™ the end of the data sheet. power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V Absolute Maximum Ratings gate drive applications. The 2-mm × 2-mm SON TA = 25°C VALUE UNIT offers excellent thermal performance for the size of VDS Drain-to-Source Voltage 30 V the package. VGS Gate-to-Source Voltage +10 / –8 V Continuous Drain Current (package Top View 5 limited) ID Continuous Drain Current (silicon A 19 limited), TC = 25°C Continuous Drain Current(1) 7.3 IDM Pulsed Drain Current, TA = 25°C (2) 57 A Power Dissipation(1) 2.4 PD W Power Dissipation, TC = 25°C 17 TJ, Operating Junction and –55 to 150 °C TSTG Storage Temperature Range Avalanche Energy, Single Pulse, EAS 18 mJ ID = 19A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 53°C/W on a 1-inch 2, 2-oz. Cu pad on a Added text for spacing 0.06-inch thick FR4 PCB. (2) Max RθJC = 7.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%. ^^ On State Resistance vs Gate to Source Voltage Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Numéro de pièce similaire - CSD17313Q2 |
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Description similaire - CSD17313Q2 |
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