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HMC287MS8 Datasheet(Fiches technique) 4 Page - Hittite Microwave Corporation

Numéro de pièce HMC287MS8
Description  GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz
Télécharger  6 Pages
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Fabricant  HITTITE [Hittite Microwave Corporation]
Site Internet  http://www.hittite.com
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 4 page
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MICROWAVE CORPORATION
8 - 31
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8
HMC287MS8
v01.0701
Outline Drawing
Absolute Maximum Ratings
Gain Control
GaAs MMIC LOW NOISE AMPLIFIER
with AGC, 2.3 - 2.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
Control Voltage Range (Vctl)
-0.2V to Vdd
RF Input Power (RFin)(Vdd = +3.0 Vdc)
0 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.62 mW/°C above 85 °C)
0.365 W
Thermal Resistance
(channel to lead)
178 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vctl (Vdc)
Gain State
Typical
Ictl (uA)
0.0
Maximum
25
1.5
Middle
25
Vdd
Minimum
25




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Numéro de composants électroniques

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