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BCX53-16-G Fiches technique(PDF) 1 Page - Comchip Technology |
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BCX53-16-G Fiches technique(HTML) 1 Page - Comchip Technology |
1 / 6 page BCX51-16-G RoHS Device General Purpose Transistor Page 1 REV:A Features QW-BTR49 Company reserves the right to improve product design , functions and reliability without notice. 1 : Base 2 : Collector 3 : Emitter - PNP. Transistor - Low voltage. Dimensions in inches and (millimeter) SOT-89-3L 0.181(4.60) 0.173(4.40) 0.102(2.60) 0.091(2.30) 0.118(3.00) TYP. 0.063(1.60) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.020(0.52) 0.013(0.32) 0.017(0.44) TYP. 0.060(1.50) 0.167(4.25) 0.155(3.94) 0.014(0.35) 0.023(0.58) 0.016(0.40) REF. 0.061(1.55) 1 2 3 - High current. Comchip Technology CO., LTD. Maximum Ratings (at TA=25°C unless otherwise noted) VCEO Emitter-Base voltage Collector-Emitter voltage Collector-Base voltage Continuous current Symbol Parameter Value Unit V V V -5 -45 -45 IC -1 A 500 mW PC Collector power dissipation °C TJ Junction temperature range -40~+150 VCBO VEBO °C Tstg Storage temperature range -55~+150 RθJA 250 °C/W Thermal resistance from junction to ambient Circuit Diagram BCX52-16-G BCX53-16-G -60 -100 -60 -80 BCX51 BCX52 BCX53 BCX51 BCX52 BCX53 E B C 1 2 3 |
Numéro de pièce similaire - BCX53-16-G |
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Description similaire - BCX53-16-G |
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