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CSD17552Q3A Fiches technique(PDF) 5 Page - Texas Instruments |
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CSD17552Q3A Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 13 page 0 0.5 1 1.5 2 2.5 −75 −25 25 75 125 175 TC - Case Temperature (ºC) ID = 250uA G001 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 11A TC = 125ºC Id = 11A G001 0 2 4 6 8 10 0 5 10 15 20 Qg - Gate Charge (nC) ID = 11A VDS =15V G001 10 100 1000 10000 0 10 20 30 VDS - Drain-to-Source Voltage (V) Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd G001 0 20 40 60 80 100 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) VGS =10V VGS =6.5V VGS =4.5V G001 0 20 40 60 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 CSD17552Q3A www.ti.com SLPS387B – SEPTEMBER 2012 – REVISED JANUARY 2016 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Copyright © 2012–2016, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD17552Q3A |
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