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CD4008BM Fiches technique(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce CD4008BM
Description  4-Bit Full Adder
Download  6 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

CD4008BM Fiches technique(HTML) 3 Page - National Semiconductor (TI)

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DC Electrical Characteristics CD4008BC (Note 2) (Continued)
Symbol
Parameter
Conditions
b
40 C
a
25 C
a
85 C
Units
Min
Max
Min
Typ
Max
Min
Max
VIL
Low Level Input Voltage
lIOl k 1 mA
VDDe5V VOe05V or 45V
15
15
15
V
VDDe10V VOe1V or 9V
30
30
30
V
VDDe15V VOe15V or 135V
40
40
40
V
VIH
High Level Input Voltage
lIOl k 1 mA
VDDe5V VOe05V or 45V
35
35
35
V
VDDe10V VOe1V or 9V
70
70
70
V
VDDe15V VOe15V or 135V
110
110
110
V
IOL
Low Level Output Current
VDDe5V VOe04V
052
044
088
036
mA
(Note 3)
VDDe10V VOe05V
13
11
225
09
mA
VDDe15V VOe15V
36
30
88
24
mA
IOH
High Level Output Current VDDe5V VOe46V
b
02
b
016 b035
b
012
mA
(Note 3)
VDDe10V VOe95V
b
05
b
04
b
08
b
03
mA
VDDe15V VOe135V
b
14
b
12
b
35
b
10
mA
IIN
Input Current
VDD e 15V VIN e 0V
b
03
b
03
b
10
m
A
VDD e 15V VIN e 15V
03
03
10
m
A
AC Electrical Characteristics
TA e 25 C CL e 50 pF RL e 200k input tr tfe20 ns unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
tPHL or tPLH
Propagation Delay Time
VDD e 5V
425
750
ns
Sum In to Sum Out
VDD e 10V
170
250
ns
VDD e 15V
125
190
ns
Carry In to Sum Out
VDD e 5V
320
650
ns
VDD e 10V
125
225
ns
VDD e 15V
95
175
ns
Sum In to Carry Out
VDD e 5V
250
500
ns
VDD e 10V
115
200
ns
VDD e 15V
90
160
ns
Carry In to Carry Out
VDD e 5V
130
245
ns
VDD e 10V
60
105
ns
VDD e 15V
45
80
ns
Carry In to Carry Out
CL e 15 pF
VDD e 5V
100
175
ns
VDD e 10V
45
75
ns
VDD e 15V
35
60
ns
tTHL
High-to-Low Transition Time
VDD e 5V
100
200
ns
VDD e 10V
50
100
ns
VDD e 15V
40
80
ns
tTLH
Low-to-High Transition Time
VDD e 5V
200
400
ns
VDD e 10V
100
200
ns
VDD e 15V
80
160
ns
CIN
Average Input Capacitance
5
75
pF
CPD
Power Dissipation Capacitance
(Note 4)
100
pF
AC Parameters are guaranteed by DC correlated testing
Note 1
‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed they are not meant to imply that the devices
should be operated at these limits The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device
operation
Note 2
VSS e 0V unless otherwise specified
Note 3
IOH and IOL are tested one output at a time
Note 4
CPD determines the no load AC power consumption of any CMOS device For complete explanation see 54C74C Family Characteristics application note
AN-90
3


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