Aug. 1999

—

1.7

1.4

1.8

5.0

–20

1.6

100

—

—

1.1

1.0

0.9

1.9

—

1.15

—

2500

40

—

—

—

—

—

—

—

800

µA

°C

Collector-emitter breakdown voltage

Input reverse current

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

“H” input voltage

“L” input voltage

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54527P

6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

V

µA

V

µA

—

V

V

V

Parameter

—

—

—

0

7

0

40

35

1

Limits

min

typ

max

Symbol

Unit

0

150

mA

Symbol

Unit

Parameter

Test conditions

Limits

min

max

V

mA

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

ns

ns

—

—

35

300

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

Output voltage

Collector current

per channel

Percent duty cycle less

than 50 %

Collector-emitter saturation voltage

Input current

Turn-on time

Turn-off time

—

PG

50

Ω

Measured device

OPEN

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

connections and input capacitance at probes

ton

50%

50%

50%

50%

toff

INPUT

OUTPUT