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BF1101R-215 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BF1101R-215 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 15 page 1999 May 14 2 NXP Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1source 2drain 3 gate 2 4 gate 1 Fig.1 Simplified outline (SOT143B). BF1101 marking code: NDp. handbook, 2 columns Top view MSB014 12 3 4 Fig.2 Simplified outline (SOT143R). BF1101R marking code: NCp. handbook, 2 columns Top view MSB035 1 2 4 3 Fig.3 Simplified outline (SOT343R). BF1101WR marking code: NC. , halfpage Top view MSB842 21 4 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 7V ID drain current 30 mA Ptot total power dissipation 200 mW y fs forward transfer admittance 25 30 mS Cig1-ss input capacitance at gate 1 2.2 2.7 pF Crss reverse transfer capacitance f = 1 MHz 25 35 fF F noise figure f = 800 MHz 1.7 2.5 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 dB V Tj operating junction temperature 150 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. |
Numéro de pièce similaire - BF1101R-215 |
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Description similaire - BF1101R-215 |
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