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FSB50660SFT Fiches technique(PDF) 8 Page - Fairchild Semiconductor

No de pièce FSB50660SFT
Description  Motion SPMR 5 SuperFETR Series
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSB50660SFT Fiches technique(HTML) 8 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
8
www.fairchildsemi.com
FSB50660SF, FSB50660SFT Rev. C6
Figure 10. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM
® 5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1 ) COM
(2 ) VB(U)
(3 ) VCC(U)
(4 ) IN(UH)
(5 ) IN(UL)
(6 ) N.C
(7 ) VB(V)
(8 ) VCC(V)
(9 ) IN(VH)
(10 ) IN(VL)
(11 ) VTS
(12 ) VB(W)
(13 ) VCC(W)
(14 ) IN(WH)
(15 ) IN(WL)
(16 ) N.C
(17) P
(18 ) U , VS(U)
(19) NU
(22) NW
C1
15 V
Supply
C3
VDC
C2
R3
R4
C6
R5
C5
For current-sensing and protection
VTS
(21 ) V , VS(V)
(20) NV
(23 ) W , VS(W)
C
4
M


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