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SPA20N60C3 Datasheet(Fiches technique) 1 Page - Infineon Technologies AG

Numéro de pièce SPA20N60C3
Description  Cool MOS Power Transistor
Télécharger  14 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
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 1 page
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2003-10-08
Page 1
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.19
ID
20.7
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1
P-TO263-3-2
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
20N60C3
20N60C3
20N60C3
20N60C3
Type
Package
Ordering Code
SPP20N60C3
P-TO220-3-1
Q67040-S4398
SPB20N60C3
P-TO263-3-2
Q67040-S4397
SPI20N60C3
P-TO262-3-1
Q67040-S4550
SPA20N60C3
P-TO220-3-31 Q67040-S4410
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
20.7
13.1
20.71)
13.11)
A
Pulsed drain current, tp limited by Tjmax
ID puls
62.1
62.1
A
Avalanche energy, single pulse
ID=10A, VDD=50V
EAS
690
690
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
EAR
1
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
20
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
208
34.5
W
SPP_B
SPP_B_I
Operating and storage temperature
Tj , Tstg
-55...+150
°C




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