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STPS15L45CBY-TR Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STPS15L45CBY-TR
Description  Automotive low drop power Schottky rectifier
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS15L45CBY-TR Fiches technique(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS15L45C-Y
2/8
Doc ID018565 Rev 2
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2. Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
Forward rms voltage
10
A
IF(AV)
Average forward current
Tc = 140 °C
δ = 0.5
Per diode
Per device
7.5
15
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp = 2 µs square
F = 1 kHz
1A
PARM
Repetitive peak avalanche power
tp = 10 µs Tj = 125 °C
266
W
Tstg
Storage temperature range
-65 to
+175
°C
Tj
Maximum operating junction temperature range(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to
+150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
4
2.4
°C/W
Rth(c)
Coupling
0.7
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-1
mA
Tj = 125 °C
-
23
45
mA
dPtot
dTj
<
1
Rth(j-a)


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