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STGW30M65DF2 Fiches technique(PDF) 10 Page - STMicroelectronics

No de pièce STGW30M65DF2
Description  Trench gate field-stop IGBT, M series 650 V, 30 A low loss
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW30M65DF2 Fiches technique(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
STGW30M65DF2, STGWA30M65DF2
10/19
DocID027768 Rev 3
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
tsc
15
10
5
10
VGE(V)
12
(µs)
11
VCC
≤ 400V, TJ ≤ 150°C
0
tSC
ISC
13
20
ISC(A)
60
30
90
120
14
15
9
150
GIPD100420151351FSR
t
IC(A)
(ns)
0
10
20
1
30
tf
TJ= 175°C, VGE= 15V,
RG
= 10Ω, VCC= 400V
10
tr
td(on)
40
50
100
td(off)
GIPD100420151403FSR
t
RG
(Ω)
(ns)
0
20
40
10
60
tf
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
80
100
td(on)
td(off)
tr
GIPD100420151412FSR
Irm
15
di/dt(A/µs)
(A)
200
600
1000
25
1400
IF = 30A, VCC = 400V
VGE = 15V
1800
30
=175°C
35
20
TJ
40
GIPD100420151417FSR
trr
180
di/dt(A/µs)
(ns)
200
600
1000
220
1400
IF = 30A, VCC = 400V,
VGE = 15V
1800
240
=175°C
260
200
TJ
280
GIPD100420151434FSR
Qrr
2.5
di/dt(A/µs)
(µC)
200
600
1000
2.8
1400
IF = 30A, VCC = 400V,
VGE = 15V
1800
2.9
=175°C
2.7
TJ
2.6
GIPD100420151442FSR


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