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STF24N60DM2 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STF24N60DM2
Description  Extremely high dv/dt ruggedness
Download  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF24N60DM2 Fiches technique(HTML) 3 Page - STMicroelectronics

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DocID025498 Rev 4
3/13
STF24N60DM2
Electrical ratings
13
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
18(1)
1.
Limited by maximum junction temperature
A
ID
Drain current (continuous) at TC = 100 °C
11(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
72(1)
A
PTOT
Total dissipation at TC = 25 °C
30
W
dv/dt (3)
3.
ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
Peak diode recovery voltage slope
40
V/ns
dv/dt(4)
4.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
4.2
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
3.5
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
180
mJ


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