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STB33N60DM2 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB33N60DM2
Description  N-channel 600 V, 0.110typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB33N60DM2 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics
DocID026854 Rev 2
5/20
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
24
A
ISDM(1)
Source-drain current (pulsed)
-
96
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 24 A
-
1.6
V
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 20:
"Test circuit for inductive
load switching and diode
recovery times")
-
150
ns
Qrr
Reverse recovery charge
-
0.5
µC
IRRM
Reverse recovery current
-
8.8
A
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 20: "Test circuit
for inductive load switching
and diode recovery times")
-
316
ns
Qrr
Reverse recovery charge
-
2.85
µC
IRRM
Reverse recovery current
-
18
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 µA, ID = 0 A
±30
-
-
V


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