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STB33N60DM2 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STB33N60DM2 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 20 page STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics DocID026854 Rev 2 5/20 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 24 A ISDM(1) Source-drain current (pulsed) - 96 A VSD(2) Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 150 ns Qrr Reverse recovery charge - 0.5 µC IRRM Reverse recovery current - 8.8 A trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 316 ns Qrr Reverse recovery charge - 2.85 µC IRRM Reverse recovery current - 18 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V |
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