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STPS10H100C Fiches technique(PDF) 4 Page - STMicroelectronics |
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STPS10H100C Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 10 page Characteristics STPS10H100C 4/10 DocID024444 Rev 1 Figure 11. Thermal resistance junction to ambient versus copper surface under tab Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Figure 8. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 per diode 0 102030 4050 60708090 100 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 IR(μA) Tj=125°C Tj=25°C Tj=150°C Tj=100°C VR(V) Figure 9. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 10. Forward voltage drop versus forward current (maximum values, per diode) 1 2 5 10 20 50 100 10 100 1000 C(pF) F=1MHz Tj=25°C VR(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10.0 100.0 IFM(A) Tj=125°C Typical values Tj=125°C Tj=25°C Tj=150°C Typical values VFM(V) 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 Rth(j-a) (°C/W) S(Cu) (cm²) Epoxy printed circuit board FR4, copper thickness: 35μm |
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