STH360N4F6-2 datasheet(3/12 Pages) STMICROELECTRONICS

No de pièce	STH360N4F6-2

Description	N-channel 40 V, 180 A STripFET??VI DeepGATE?? Power MOSFET in H짼PAK-2 package

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STH260N6F6-2

Electrical ratings

Doc ID 023422 Rev 1

3/12

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

Current limited by package

Drain current (continuous) at TC = 25 °C

180

A

ID

(1)

Drain current (continuous) at TC = 100 °C

180

A

IDM

(1)

Drain current (pulsed)

720

A

PTOT

Total dissipation at TC = 25 °C

300

W

Derating factor

2

W/°C

Tstg

Storage temperature

- 55 to 175

°C

Tj

Operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.5

°C/W

Rthj-pcb

(1)

1.

When mounted on FR-4 board of 1 inch², 2 oz Cu

Thermal resistance junction-pcb max

35

°C/W

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