STF22NM60ND datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STF22NM60ND

Description	Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

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Electrical characteristics

STF22NM60ND

4/13

DocID026895 Rev 2

2

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

dv/dt(1)

1.

Characteristic value at turn off on inductive load

Drain source voltage slope

VDD= 480 V, ID= 17 A,

VGS= 10 V

36

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

10

µA

VDS = 600 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 8.5 A

0.170

0.220

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-1800

-

pF

Coss

Output capacitance

90

pF

Crss

Reverse transfer

capacitance

8pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

300

-

pF

td(on)

Turn-on delay time

VDD =300 V, ID = 8.5 A

RG =4.7 Ω, VGS = 10 V

(see Figure 19),

(see Figure 14)

-18

-

ns

tr

Rise time

16

ns

td(off)

Turn-off delay time

70

ns

tf

Fall time

48

ns

Qg

Total gate charge

VDD = 480 V, ID = 17 A,

VGS = 10 V,

(see Figure 15)

-60

nC

Qgs

Gate-source charge

13

nC

Qgd

Gate-drain charge

30

-

nC

RG

Gate input resistance

f =1 MHz Gate DC Bias=0

Test signal level = 20 mV

Open drain

-3

-

Ω

Numéro de pièce similaire - STF22NM60ND

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Description similaire - STF22NM60ND

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