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STGD10HF60KD Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 21 page DocID022874 Rev 3 3/21 STGD10HF60KD Electrical ratings 21 1 Electrical ratings TCASE = 25 °C unless otherwise specified. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at TC = 25 °C 18 A IC (1) Collector current (continuous) at TC = 100 °C 10 A ICL (2) 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V Turn-off latching current 30 A ICP (3) 3. Pulse width limited by max. junction temperature allowed Pulsed collector current 30 A VGE Gate-emitter voltage ± 20 V VGEM Gate-emitter voltage pulsed (tp ≤ 1 ms) ± 30 V IF Diode RMS forward current 7 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A PTOT Total dissipation 62.5 W tscw Short circuit withstand time (VCE = 50 V, VGE = 15 V, TC = 150 °C) 10 µs Tj IGBT operating junction temperature – 55 to 150 °C Diode operating junction temperature – 55 to 175 °C Tstg Storage temperature – 65 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT 2 °C/W Rthj-case Thermal resistance junction-case diode 5.8 °C/W Rthj-amb Thermal resistance junction-ambient 100 °C/W I C TC () T jmax () T C – R thj c – V CE sat () max () Tjmax () IC TC () , () × ------------------------------------------------------------------------------------------------------- = |
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