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STGD10HF60KD Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STGD10HF60KD
Description  Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD10HF60KD Fiches technique(HTML) 3 Page - STMicroelectronics

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DocID022874 Rev 3
3/21
STGD10HF60KD
Electrical ratings
21
1
Electrical ratings
TCASE = 25 °C unless otherwise specified.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at TC = 25 °C
18
A
IC
(1)
Collector current (continuous) at TC = 100 °C
10
A
ICL
(2)
2.
Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current
30
A
ICP
(3)
3.
Pulse width limited by max. junction temperature allowed
Pulsed collector current
30
A
VGE
Gate-emitter voltage
± 20
V
VGEM
Gate-emitter voltage pulsed (tp ≤ 1 ms)
± 30
V
IF
Diode RMS forward current
7
A
IFSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
20
A
PTOT
Total dissipation
62.5
W
tscw
Short circuit withstand time (VCE = 50 V, VGE = 15 V,
TC = 150 °C)
10
µs
Tj
IGBT operating junction temperature
– 55 to 150
°C
Diode operating junction temperature
– 55 to 175
°C
Tstg
Storage temperature
– 65 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case IGBT
2
°C/W
Rthj-case Thermal resistance junction-case diode
5.8
°C/W
Rthj-amb Thermal resistance junction-ambient
100
°C/W
I
C TC
()
T
jmax
()
T
C
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
-------------------------------------------------------------------------------------------------------
=


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