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STGD10HF60KD Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STGD10HF60KD
Description  Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD10HF60KD Fiches technique(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
September 2015
DocID022874 Rev 3
1/21
STGD10HF60KD
Automotive-grade 10 A, 600 V, short-circuit rugged IGBT
with Ultrafast diode
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction
susceptibility)
• Switching losses include diode recovery
energy
• Short-circuit rated
• Very soft Ultrafast recovery anti-parallel diode
Applications
• High frequency inverters
• SMPS and PFC in both hard switch and
resonant topologies
• Motor drives
• Injection systems
Description
This device utilizes the advanced PowerMESH™
process for the IGBT and the Turbo 2 Ultrafast
high voltage technology for the diode. The
combination results in a very good trade-off
between conduction losses and switching
behavior rendering the product ideal for diverse
high voltage applications operating at high
frequencies.
DPAK
1
3
TAB
Table 1. Device summary
Order code
Marking
Package
Packaging
STGD10HF60KD
GD10HF60KD
DPAK
Tape and reel
www.st.com


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