STB30NF20L datasheet(1/14 Pages) STMICROELECTRONICS

No de pièce	STB30NF20L

Description	Very good manufacturing repeatability

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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This is information on a product in full production.

March 2012

Doc ID 022753 Rev 2

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STB30NF20L

N-channel 200 V, 0.065

Ω, 30 A STripFET™ Power MOSFET

in D2PAK package

Datasheet — production data

Features

■ Gate charge minimized

■ 100% avalanche tested

■ Excellent figure of merit (RDS* Qg)

■ Very good manufacturing repeatability

■ Very low intrinsic capacitance

Applications

■ Automotive

Description

This N-channel enhancement mode Power

MOSFET benefits from the latest refinement of

STMicroelectronics’ unique “single feature size”

strip-based process, which decreases the critical

alignment steps to offer exceptional

manufacturing reproducibility. The result is a

transistor with extremely high packing density for

low on-resistance, rugged avalanche

characteristics and low gate charge.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on)

ID

PTOT

STB30NF20L

200 V

0.075

Ω

30 A

150 W

1

3

D²PAK

TAB

Table 1.

Device summary

Order code

Marking

Package

Packaging

STB30NF20L

30NF20L

D²PAK

Tape and reel

www.st.com

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