Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STF10LN80K5 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STF10LN80K5
Description  N-channel 800 V, 0.55typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package
Download  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF10LN80K5 Fiches technique(HTML) 4 Page - STMicroelectronics

  STF10LN80K5 Datasheet HTML 1Page - STMicroelectronics STF10LN80K5 Datasheet HTML 2Page - STMicroelectronics STF10LN80K5 Datasheet HTML 3Page - STMicroelectronics STF10LN80K5 Datasheet HTML 4Page - STMicroelectronics STF10LN80K5 Datasheet HTML 5Page - STMicroelectronics STF10LN80K5 Datasheet HTML 6Page - STMicroelectronics STF10LN80K5 Datasheet HTML 7Page - STMicroelectronics STF10LN80K5 Datasheet HTML 8Page - STMicroelectronics STF10LN80K5 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 14 page
background image
Electrical characteristics
STF10LN80K5
4/14
DocID027751 Rev 3
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V
TC = 125 °C
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 4 A
0.55
0.63
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
427
-
pF
Coss
Output capacitance
-
43
-
pF
Crss
Reverse transfer capacitance
-
0.25
-
pF
Co(tr)
(1)
Equivalent capacitance time
related
VDS = 0 to 640 V,
VGS = 0 V
-
72
-
pF
Co(er)
(2)
Equivalent capacitance energy
related
27
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz , ID= 0 A
-
7
-
Qg
Total gate charge
VDD = 640 V, ID = 8 A
VGS= 10 V
See Figure 16: "Test
circuit for gate charge
behavior"
-
15
-
nC
Qgs
Gate-source charge
-
4.2
-
nC
Qgd
Gate-drain charge
-
9
-
nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 400 V, ID = 4 A, RG = 4.7 Ω
VGS = 10 V See Figure 15: "Test
circuit for resistive load switching
times" and Figure 20: "Switching
time waveform"
-
11.8
-
ns
tr
Rise time
-
10
-
ns
td(off)
Turn-off delay time
-
28
-
ns
tf
Fall time
-
13
-
ns


Numéro de pièce similaire - STF10LN80K5

FabricantNo de pièceFiches techniqueDescription
logo
Superworld Electronics
STF1006 SUPERWORLD-STF1006 Datasheet
639Kb / 6P
   COMMON MODE CHOKE
STF1006102YZF SUPERWORLD-STF1006102YZF Datasheet
639Kb / 6P
   COMMON MODE CHOKE
STF1006121YZF SUPERWORLD-STF1006121YZF Datasheet
639Kb / 6P
   COMMON MODE CHOKE
STF1006202YZF SUPERWORLD-STF1006202YZF Datasheet
639Kb / 6P
   COMMON MODE CHOKE
STF1006251YZF SUPERWORLD-STF1006251YZF Datasheet
639Kb / 6P
   COMMON MODE CHOKE
More results

Description similaire - STF10LN80K5

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STFI10LN80K5 STMICROELECTRONICS-STFI10LN80K5 Datasheet
628Kb / 13P
   N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I짼PAKFP package
February 2016
STP10LN80K5 STMICROELECTRONICS-STP10LN80K5 Datasheet
741Kb / 14P
   N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
STF7LN80K5 STMICROELECTRONICS-STF7LN80K5 Datasheet
709Kb / 13P
   N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a TO-220FP package
December 2015 Rev 1
STF23N80K5 STMICROELECTRONICS-STF23N80K5 Datasheet
714Kb / 13P
   N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package
August 2015 Rev 1
STF8N90K5 STMICROELECTRONICS-STF8N90K5 Datasheet
711Kb / 13P
   N-channel 900 V, 0.60 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package
November 2016 Rev 1
STD10LN80K5 STMICROELECTRONICS-STD10LN80K5 Datasheet
842Kb / 17P
   N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package
March 2016
STF10N80K5 STMICROELECTRONICS-STF10N80K5 Datasheet
576Kb / 14P
   N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package
November 2014 Rev 4
STB10LN80K5 STMICROELECTRONICS-STB10LN80K5 Datasheet
920Kb / 16P
   N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D²PAK package
February 2016
STF5N80K5 STMICROELECTRONICS-STF5N80K5 Datasheet
715Kb / 13P
   N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
STF4N90K5 STMICROELECTRONICS-STF4N90K5 Datasheet
726Kb / 13P
   N-channel 900 V, 1.90 廓 typ., 4 A MDmesh??K5 Power MOSFET in a TO-220FP package
November 2016 Rev 2
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com