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STD46N6F7 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STD46N6F7 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STD46N6F7 4/14 DocID028323 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 60 V IDSS Zero gate voltage drain current VGS = 0 V VDS = 60 V 1 µA IGSS Gate-body leakage current VGS = 20 V, VDS = 0 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 7.5 A 0.012 0.014 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 30 V, f = 1 MHz, VGS = 0 V - 1035 - pF Coss Output capacitance - 450 - pF Crss Reverse transfer capacitance - 53 - pF Qg Total gate charge VDD = 30 V, ID = 15 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 17 - nC Qgs Gate-source charge - 5.7 - nC Qgd Gate-drain charge - 5.7 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") - 14.5 - ns tr Rise time - 15.3 - ns td(off) Turn-off delay time - 19.4 - ns tf Fall time - 8 - ns Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = 15 A, VGS = 0 V - 1.2 V trr Reverse recovery time ID = 15 A, di/dt = 100 A/µs VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 26.8 ns Qrr Reverse recovery charge - 14.2 nC IRRM Reverse recovery current - 1.06 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
Numéro de pièce similaire - STD46N6F7 |
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Description similaire - STD46N6F7 |
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