STD45P4LLF6AG datasheet(5/16 Pages) STMICROELECTRONICS

No de pièce	STD45P4LLF6AG

Description	High avalanche ruggedness

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STD45P4LLF6AG

Electrical characteristics

DocID027807 Rev 2

5/16

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

-50

A

ISDM(1)

Source-drain current

(pulsed)

-

-200

A

VSD(2)

Forward on voltage

VGS = 0 V, ISD = -50 A

-

-1.3

V

trr

Reverse recovery time

ISD = -50 A, di/dt = -100 A/µs,

VDD = -32 V (see Figure 15: "Test

circuit for inductive load

switching and diode recovery

times")

-

27.5

ns

Qrr

Reverse recovery

charge

-

24.5

nC

IRRM

Reverse recovery

current

-

-1.8

A

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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