STB45N40DM2AG datasheet(5/15 Pages) STMICROELECTRONICS

No de pièce	STB45N40DM2AG

Description	Extremely low gate charge and input capacitance

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STB45N40DM2AG

Electrical characteristics

DocID028285 Rev 1

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

38

A

ISDM(1)

Source-drain current

(pulsed)

-

152

A

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 38 A

-

1.6

V

trr

Reverse recovery time

ISD = 38 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

-

95

ns

Qrr

Reverse recovery charge

-

0.4

µC

IRRM

Reverse recovery current

-

8.5

A

trr

Reverse recovery time

ISD = 38 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

185

ns

Qrr

Reverse recovery charge

-

1.62

µC

IRRM

Reverse recovery current

-

17.5

A

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±250 µA, ID = 0 A

±30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

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