BGA622

Data Sheet

5

2002-09-13

Maximum Ratings

Note: All Voltages refer to GND-Node

Electrical Characteristics at T

Parameter

Symbol

Value

Unit

Voltage at pin Vcc

V

cc

3.5

V

Voltage at pin Out

V

OUT

4V

Current into pin In

I

IN

0.1

mA

Current into pin Out

I

OUT

1mA

Current into pin Vcc

I

Vcc

10

mA

RF input power

P

IN

6dBm

Total power dissipation, T

1)

1)

T

P

tot

35

mW

Junction temperature

T

j

150

°C

Ambient temperature range

T

A

-65 ... +150

°C

Storage temperature range

T

STG

-65 ... +150

°C

Thermal resistance: junction-soldering point

R

th JS

300

K/W

Vcc=2.75 V, Frequency=1.575 GHz, unless otherwise specified

Parameter

Symbol

min.

typ.

max.

Unit

Insertion power gain

|S

2

14.8

dB

Insertion power gain (Off-State)

|S

2

-24

dB

Input Return Loss (On-State)

RL

IN

6dB

Output Return Loss (On-State)

RL

OUT

12

dB

Noise Figure (Z

F

50

W

1.05

dB

Input Third Order Intercept Point

1)

IP3 value depends on termination of all intermodulation frequency components. Termination used for this

measurement is 50

W from 0.1 to 6 GHz

IIP

3

0dBm

Input Third Order Intercept Point

IIP

3

18

dBm

Input Power at 1dB Gain Compression

P

-1dB

-16.5

dBm

Total Device Off Current, V

V

I

tot-off

260

µA

Total Device On Current, V

I

tot-on

5.8

mA