 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
BF999 Fiches technique(PDF) 1 Page - Infineon Technologies AG |
|
||||||||||||||||||||||||||||||
BF999 Fiches technique(HTML) 1 Page - Infineon Technologies AG |
|
|
1 / 5 page  BF999 Nov-08-2002 1 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications 1 2 3 VPS05161 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 LBs 1 = G 2 = D 3 = S SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 mA Total power dissipation , TS 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Channel - soldering point1) Rthchs 370 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Numéro de pièce similaire - BF999 |
|
Description similaire - BF999 |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
