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BCX51-10 Fiches technique(PDF) 3 Page - Infineon Technologies AG

No de pièce BCX51-10
Description  PNP Silicon AF Transistors
Download  5 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCX51-10 Fiches technique(HTML) 3 Page - Infineon Technologies AG

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BCX51...BCX53
Feb-10-2004
3
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCX51
BCX52
BCX53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
BCX51
BCX52
BCX53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 30 V, IE = 0
ICBO
-
-
100
nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
20
µA
DC current gain 1)
IC = 5 mA, VCE = 2 V
hFE
25
-
-
-
DC current gain 1)
IC = 150 mA, VCE = 2 V
BCX51...53
hFE-grp.10
hFE-grp.16
hFE
40
63
100
-
100
160
250
160
250
DC current gain 1)
IC = 500 mA, VCE = 2 V
hFE
25
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.5
V
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
VBE(ON)
-
-
1
AC Characteristics
-
MHz
fT
-
Transition frequency
IC = 50 mA, VCE = 10 V, f = 20 MHz
125
1) Pulse test: t
300µs, D = 2%


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