BCW60C datasheet(4/9 Pages) INFINEON

No de pièce	BCW60C

Description	NPN Silicon AF Transistors

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Fabricant	INFINEON [Infineon Technologies AG]

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BCW60, BCX70

4

Jan-29-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

max.

typ.

min.

DC Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

0.12

0.2

V

0.25

0.55

-

VCEsat

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

0.7

0.83

0.85

1.05

-

0.75

-

VBE(ON)

-

0.55

-

0.52

0.65

0.78

Base-emitter voltage 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

AC Characteristics

-

250

-

fT

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

MHz

-

3

Ccb

Collector-base capacitance

VCB = 10 V, f = 1 MHz

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

-

Ceb

-

8

hFE-grp.

A / G

B / H

C / J / FF

D / K / FN

h11e

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

-

2.7

3.6

4.5

7.5

-

k

Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

| hFE-grp.

A / G

B / H

C / J/FF

D / K / FN

h12e

-

1.5

2

3

-

10-4

1) Pulse test: t

≤=300µs, D = 2%

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