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BCM846S Datasheet(Fiches technique) 1 Page - Infineon Technologies AG

Numéro de pièce BCM846S
Description  NPN Silicon AF Transistor Array
Télécharger  7 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
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Aug-30-2002
1
BCM846S
VPS05604
6
3
1
5
4
2
NPN Silicon AF Transistor Array
 Precision matched transistor pair: IC  10%
 For current mirror applications
 Low collector-emitter saturation voltage
 Two (galvanic) internal isolated Transistors
 Complementary type: BCM856S
EHA07178
6
54
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
Type
Marking
Pin Configuration
Package
BCM846S
1Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
65
V
Collector-emitter voltage
VCES
80
Collector-base voltage
VCBO
80
Emitter-base voltage
VEBO
6
Collector current
IC
100
mA
Peak collector current
ICM
200
Total power dissipation-
TS = 115 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
140
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance




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