BC857S datasheet(3/6 Pages) INFINEON

No de pièce	BC857S

Description	PNP Silicon AF Transistor Array

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Fabricant	INFINEON [Infineon Technologies AG]

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BC857S

Nov-29-2001

3

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT

-

250

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

3

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

10

-

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h11e

-

4.5

-

k

Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h12e

-

2

-

10-4

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h21e

-

330

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h22e

-

30

-

S

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 k,

f = 1 kHz,

f = 200 Hz

F

-

10

dB

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Description similaire - BC857S

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	BCM856S	191Kb / 8P	PNP Silicon AF Transistor Array Aug-30-2002
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