BAT62-07W datasheet(4/9 Pages) INFINEON

No de pièce	BAT62-07W

Description	Silicon Schottky Diode

Download	9 Pages

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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4 / 9 page

Apr-22-2004

4

BAT62...

Diode capacitance CT = ƒ (VR)

f = 1MHz

0

0.0

EHD07062

BAT 62

C

V

R

T

10

20

30

V

40

0.2

0.4

0.6

0.8

pF

1.0

Reverse current IR = ƒ(VR)

TA = Parameter

0

5

10

15

20

25

30

V

40

VR

-1

10

0

10

1

10

2

10

3

10

uA

25°C

85°C

125°C

Forward current IF = ƒ (VF)

TA = Parameter

0

0.2

0.4

0.6

0.8

1

1.2 V

1.5

VF

1

10

2

10

3

10

4

10

uA

25°C

85°C

125°C

-40°C

Forward current IF = ƒ (TS)

BAT62

0

15

30

45

60

75

90 105 120 °C

150

TS

0

2

4

6

8

10

12

14

16

18

mA

22

Numéro de pièce similaire - BAT62-07W

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BAT62-07W	33Kb / 4P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Infineon Technologies A...	BAT62-07W	95Kb / 4P	Silicon Schottky Diode Oct-07-1999
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Infineon Technologies A...	BAT62-07W	209Kb / 18P	Silicon Schottky Diode 2007-04-19
Infineon Technologies A...	BAT62-07W	1Mb / 19P	Low barrier diode for detectors up to GHz frequencies 2014-02-13

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Description similaire - BAT62-07W

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BAT62-07W Fiches technique(PDF) 4 Page - Infineon Technologies AG

BAT62-07W Fiches technique(HTML) 4 Page - Infineon Technologies AG

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