BAL99 datasheet(2/4 Pages) INFINEON

No de pièce	BAL99

Description	Silicon Switching Diode

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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BAL99

Jul-27-2001

2

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Breakdown voltage

I(BR) = 100 µA

V(BR)

-

V

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

VF

-

715

855

1000

1250

mV

Reverse current

VR = 70 V

IR

-

2.5

µA

Reverse current

VR = 25 V, TA = 150 °C

VR = 70 V

IR

-

30

50

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CD

-

1.5

pF

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 ,

measured at IR = 1mA

trr

-

6

ns

Test circuit for reverse recovery time

EHN00014

Oscillograph

Ι

F

D.U.T.

Pulse generator: tp = 100ns, D = 0.05,

tr = 0.6ns, Ri = 50

Oscillograph: R = 50

, tr = 0.35ns,

C

1pF

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