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TMP275AQDGKRQ1 Fiches technique(PDF) 4 Page - Texas Instruments |
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TMP275AQDGKRQ1 Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 31 page 4 TMP275-Q1 SBOS760A – NOVEMBER 2015 – REVISED JANUARY 2016 www.ti.com Product Folder Links: TMP275-Q1 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Power supply, V+ 7 V Input voltage(2) –0.5 7 V Input current 10 mA Operating temperature –55 127 °C Junction temperature, TJ max 150 °C Storage temperature, Tstg –60 130 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage 2.7 5.5 V Operating free-air temperature, TA –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) TMP275-Q1 UNIT D (SOIC) DGK (VSSOP) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 121.6 185 °C/W RθJC(top) Junction-to-case (top) thermal resistance 70.5 76.1 °C/W RθJB Junction-to-board thermal resistance 62 106.4 °C/W ψJT Junction-to-top characterization parameter 23 14.1 °C/W ψJB Junction-to-board characterization parameter 61.5 104.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W |
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