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54ABT652E-QML Fiches technique(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce 54ABT652E-QML
Description  Octal Transceivers and Registers with TRI-STATE Outputs
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

54ABT652E-QML Fiches technique(HTML) 6 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
Storage Temperature
−65˚C to +150˚C
Ambient Temperature under Bias
−55˚C to +125˚C
Junction Temperature under Bias
Ceramic
−55˚C to +175˚C
V
CC Pin Potential to
Ground Pin
−0.5V to +7.0V
Input Voltage (Note 3)
−0.5V to +7.0V
Input Current (Note 3)
−30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disable or
or Power-Off State
−0.5V to +5.5V
in the HIGH State
−0.5V to V
CC
Current Applied to Output
in LOW State (Max)
twice the rated I
OL (mA)
DC Latchup Source Current
−500 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
−55˚C to +125˚C
Supply Voltage
Military
+4.5V to +5.5V
Minimum Input Edge Rate
(
∆V/∆t)
Data Input
50 mV/ns
Enable Input
20 mV/ns
Clock Input
100 mV/ns
Note 2: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 3: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol
Parameter
ABT652
Units
V
CC
Conditions
Min
Typ
Max
V
IH
Input HIGH Voltage
2.0
V
Recognized HIGH Signal
V
IL
Input LOW Voltage
0.8
V
Recognized LOW Signal
V
CD
Input Clamp Diode Voltage
−1.2
V
Min
I
IN = −18 mA (Non I/O Pins)
V
OH
Output HIGH
54ABT
2.5
V
Min
I
OH = −3 mA, (An,Bn)
Voltage
54ABT
2.0
I
OH = −24 mA, (An,Bn)
V
OL
Output LOW
54ABT
0.55
V
Min
I
OL = 48 mA, (An,Bn)
Voltage
I
IH
Input HIGH Current
2
µA
Max
V
IN = 2.7V (Non-I/O Pins) (Note 4)
V
IN = VCC (Non-I/O Pins)
I
BVI
Input HIGH Current
7
µA
Max
V
IN = 7.0V (Non-I/O Pins)
Breakdown Test
I
BVIT
Input HIGH Current
100
µA
Max
V
IN = 5.5V (An,Bn)
Breakdown Test (I/O)
I
IL
Input LOW Current
−2
µA
Max
V
IN = 0.5V (Non-I/O Pins) (Note 4)
V
IN = 0.0V (Non-I/O Pins)
I
IH +IOZH
Output Leakage Current
50
µA
0V–5.5V
V
OUT = 2.7V (An,Bn);
OEBA = 2.0V and OEAB = GND = 2.0V
I
IL +IOZL
Output Leakage Current
−50
µA
0V–5.5V
V
OUT = 0.5V (An,Bn);
OEBA = 2.0V and OEAB = GND = 2.0V
I
OS
Output Short-Circuit Current
−50
−180
mA
Max
V
OUT = 0V (An,Bn)
I
CEX
Output HIGH Leakage Current
50
µA
Max
V
OUT = VCC (An,Bn)
I
CCH
Power Supply Current
250
µA
Max
All Outputs HIGH
I
CCL
Power Supply Current
30
mA
Max
All Outputs LOW
I
CCZ
Power Supply Current
250
µA
Max
Outputs TRI-STATE;
All others at V
CC or GND
I
CCT
Additional I
CC/Input
2.5
mA
Max
V
I = VCC − 2.1V
All others at V
CC or GND
Note 4: Guaranteed but not tested.
Note 5: For 8 outputs toggling, ICCD < 1.4 mA/MHz.
Note 6: Guaranteed, but not tested.
www.national.com
6


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