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MMSF10N03Z Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MMSF10N03Z
Description  Power MOSFET
Download  11 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMSF10N03Z Fiches technique(HTML) 2 Page - ON Semiconductor

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MMSF10N03Z
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current − Continuous @ TA = 25°C (Note 1)
Drain Current − Continuous @ TA = 70°C (Note 1)
Drain Current − Pulsed Drain Current (Note 3)
ID
ID
IDM
10
7.7
50
Adc
Total Power Dissipation @ TA = 25°C (Note 1)
Linear Derating Factor @ TA = 25°C (Note 1)
PD
2.5
20
Watts
mW/°C
Total Power Dissipation @ TA = 25°C (Note 2)
Linear Derating Factor @ TA = 25°C (Note 2)
PD
1.6
12
Watts
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W)
EAS
1000
mJ
THERMAL RESISTANCE
Parameter
Symbol
Typ
Max
Unit
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJA
50
80
°C/W
1. When mounted on 1″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds).
2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State).
3. Repetitive rating; pulse width limited by maximum junction temperature.


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