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BCW69LT1 Fiches technique(PDF) 2 Page - ON Semiconductor |
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BCW69LT1 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 8 page BCW69LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = −2.0 mAdc, VCE = −5.0 Vdc) BCW69 BCW70 hFE 120 215 260 500 — Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) VCE(sat) — −0.3 Vdc Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) −0.6 −0.75 Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = −10 Vdc, f = 1.0 MHz) Cobo — 7.0 pF Noise Figure (IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF — 10 dB TYPICAL NOISE CHARACTERISTICS (VCE = −5.0 Vdc, TA = 25°C) Figure 1. Noise Voltage f, FREQUENCY (Hz) 5.0 7.0 10 3.0 Figure 2. Noise Current f, FREQUENCY (Hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 BANDWIDTH = 1.0 Hz RS ≈ 0 IC = 10 μA 100 μA 30 μA BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 300 μA 100 μA 30 μA 10 μA 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 mA 0.2 300 μA |
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