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BCW69LT1 Fiches technique(PDF) 6 Page - ON Semiconductor |
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BCW69LT1 Fiches technique(HTML) 6 Page - ON Semiconductor |
6 / 8 page BCW69LT1 http://onsemi.com 6 TJ, JUNCTION TEMPERATURE (°C) 104 −4 0 Figure 15. Typical Collector Leakage Current DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 14 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ΔT = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN−569. 10−2 10−1 100 101 102 103 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 VCC = 30 V ICEO ICBO AND ICEX @ VBE(off) = 3.0 V |
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