ESD8011 datasheet(2/8 Pages) ONSEMI

No de pièce	ESD8011

Description	ESD Protection Diodes

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Fabricant	ONSEMI [ON Semiconductor]

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ESD8011

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

VRWM

Working Peak Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

VHOLD

Holding Reverse Voltage

IHOLD

Holding Reverse Current

RDYN

Dynamic Resistance

IPP

Maximum Peak Pulse Current

VC

Clamping Voltage @ IPP

VC = VHOLD + (IPP * RDYN)

I

V

VCVRWMVHOLD

VBR

RDYN

VC

IR

IT

IHOLD

−IPP

RDYN

IPP

VC = VHOLD + (IPP * RDYN)

VRWM

VHOLD

IR

IT

IHOLD

VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

5.5

V

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

6.5

7.3

V

Reverse Leakage Current

IR

VRWM = 5.5 V, I/O Pin to GND

1.0

mA

Reverse Holding Voltage

VHOLD

I/O Pin to GND

2.05

V

Holding Reverse Current

IHOLD

I/O Pin to GND

17

mA

Clamping Voltage

TLP (Note 2)

VC

IPP = 8 A

IEC61000−4−2 Level 2 Equivalent

(

±4 kV Contact, ±8 kV Air)

11.0

V

IPP = 16 A

IEC61000−4−2 Level 2 Equivalent

(

±8 kV Contact, ±16 kV Air)

19.0

Dynamic Resistance

RDYN

Pin1 to Pin2

Pin2 to Pin1

1.0

W

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz

0.10

0.20

pF

Series Inductance

LS

VR = 0 V

0.3

nH

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figure 5 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

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