Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC1642.PDF 2000-12-20

SD1070

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S

DI VI SI ON

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

This silicon epitaxial NPN planar high frequency transistor employs a

multi emitter electrode design. This feature together with a heavily diffused

base matrix located between the individual emitters results in high RF

current handling capability, high power gain, low base resistance and low

output capacitance. These transistors are intended for Class A, B, or C

amplifier, oscillator or frequency multiplier circuits and are specifically

designed for operation in the VHF-UHF region.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

! 130 - 400 MHz

! 28 Volts

! High Power Gain

! High Efficiency

! Common Emitter

175 MHz

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

! VHF - UHF Applications

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

4.0

V

Device Current

3.0

A

Power Dissipation

23.0

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

7.6

°C/W

1

2

3

3. Collector

1. Emitter

2. Base

PIN CONNECTION