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LA4425AN-D-E Fiches technique(PDF) 2 Page - ON Semiconductor |
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LA4425AN-D-E Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 10 page LA4425AN http://www.onsemi.com 2 Operating Conditions at Ta = 25 C, Parameter Symbol Conditions Ratings Unit Recommended supply voltage VCC 13.2 V Recommended load resistance RL 4 Operating voltage range VCC op 5 to 16 V Operating load resistance range RL op Under conditions where maximum ratings are not exceeded 2 to 8 Electrical Characteristics at Ta 25C, VCC = 13.2V, RL = 4, f = 1 kHz, Rg = 600, specified board/specified circuit, 30 301.5mm3 thick aluminum used Parameter Symbol Conditions Ratings Unit min typ max Quiescent current ICCO 65 130 mA Voltage gain VG VO = 0dBm 43 45 47 dB Output power PO1 13.2 V / 4 , THD = 10% 4 5 W PO2 14.4 V / 4 , THD = 10% 5 6 W Total harmonic distortion THD VO = 2V 0.1 1.0 % Output noise voltage VNO Rg = 0, BPF = 20 Hz to 20 kHz 30 40 dB Ripple rejection ratio SVRR1 Rg = 0, BPF = 20 Hz to 20 kHz VR = 0dBm, fR = 100Hz 30 40 dB SVRR2 Rg = 0, BPF = 20 Hz to 20 kHz VR = 0dBm, fR = 100 Hz 47 dB Over-voltage attack VCCX Rg = 0 21.5 V Starting time tS 0.35 s Input resistance RIN 50 k Roll-off frequency fL 40 Hz fH 90 kHz Thermal operating temperature Tc 125 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Numéro de pièce similaire - LA4425AN-D-E |
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Description similaire - LA4425AN-D-E |
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