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BYS12-90 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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BYS12-90 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BYS12-90 www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 1 Document Number: 88950 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 90 V IFSM 40 A VF at IF = 1.0 A 0.75 V TJ max. 150 °C Package DO-214AC (SMA) Diode variations Single die DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYS12-90 UNIT Device marking code BYS 209 Maximum repetitive peak reverse voltage VRRM 90 V Maximum average forward rectified current IF(AV) 1.5 A Peak forward surge current single half sine-wave superimposed on rated load 8.3 ms IFSM 40 A 10 ms 30 Voltage rate of change (rated VR) dV/dt 10 000 V/μs Junction and storage temperature range TJ, TSTG -55 to +150 °C |
Numéro de pièce similaire - BYS12-90_15 |
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Description similaire - BYS12-90_15 |
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